高失配半导体薄膜材料的纳米异质外延新技术

纳米异质外延技术是制备高失配半导体薄膜的一种纳米制作技术路线,随着超大规模集成电路纳米图样加工技术的进步,它将在制备无缺陷密度且单晶品质完美的高失配半导体薄膜材料中发挥巨大的作用。详细地综述了纳米异质外延技术的原理,介绍了纳米图样制作技术并展示了运用纳米异质外延技术在Si(111)衬底上实现高失配GaN(失配度为20%)薄膜材料及在Si(100)衬底上实现InP薄膜材料的高品质单晶外延生长。

Nanoheteroepitaxial New Technology for High Mismatched Semiconductor Thin Film Materials

Nanoheteroepitaxial techonology is a nanofabrication route to improved high mismatched semiconductor thin film materials.With the further advance in the fabrication tehcnology of nano-pattern,much attention will be paid to nanoheteroepitaxy for the growth of high quality heteroepitaxial film on Si substrate.Both the fundamental principle of nanoheteroepitaxial techno-logy and various methods for fabricating nano-pattern on substrate are overviewed.In addition,the high quality mismatched(20%)GaN film with dislocation-free grown on Si(111)substrate and InP film on Si(100)substrates fabricated by nanoheteroepitaxy also demonstrated its availability.