| In_(0.53)Ga_(0.47)As三元外延层散射机制的研究(英文) |
| |
| 引用本文： | 汪开元,尚中林,黄玉辉,曹康敏,孙承烋,高国全.In_(0.53)Ga_(0.47)As三元外延层散射机制的研究(英文)[J].固体电子学研究与进展,1989(4). |
| |
| 作者姓名： | 汪开元 尚中林 黄玉辉 曹康敏 孙承烋 高国全 |
| |
| 作者单位： | 东南大学电子科学系
(汪开元，尚中林，黄玉辉，曹康敏，孙承烋)，东南大学电子科学系(高国全) |
| |
| 摘 要： |
|
Study of Scatter Mechanism in LPE Ternary Film InGaAs |
| |
| Abstract: | With method of Van Derberg,this paper gives the electron mobilities at different temperature in In0.53Ga0 .47As on InP by LPE, and analyses them from scatters of polaried optical phonons, ioned impurities and alloy. The results of the experiment and theory show that the scatter of ioned impurities and alloy scatter play an importment role at low temperature and the scatter of polaried optical phonon is superior at high temperature. It is also indicated that the alloy scatter is very, active for the ternary alloy density of about 1×1018cm-3. At last, we choose the optimal alloy potential △U= 0.83eV and give the limitation of Matthiessen rule. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
