Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication |
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Authors: | Sutikno Bin Madnasri U Hashim Z A Z Jamal |
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Affiliation: | (1) School of Microelectronic Engineering, Northern Malaysia University College of Engineering (KUKUM), Jl. Bukit Lagi 01000, Kangar, Perlis, Malaysia |
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Abstract: | We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor
fabrication process. The optimum design of dot and nano constriction plays a significant role in determining optimum etching
resolution and single electron transistor performance. In this research, we have optimized nano dot and nano constriction
dimensions of resist by controlling some parameters, such as e-beam dose, spin speed, pre-bake time and image development
time. However, a nano constriction design variety of 120–200 nm in width was carried out to reach the optimum design. In this
paper, the fabrication process of cone nano dots using e-beam lithography with considering proximity effect is reported. As
nano constriction design decreased, cone nano dot changed to pyramid nano dot and the compression effect on the dot also significantly
increased as well. |
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