| 化学机械抛光技术现状与发展趋势 |
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| 引用本文： | 童志义. 化学机械抛光技术现状与发展趋势[J]. 电子工业专用设备, 2004, 33(6): 1-6 |
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| 作者姓名： | 童志义 |
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| 作者单位： | 中国电子科技集团第45研究所,北京,东燕郊,101601 |
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| 摘 要： | 概述了ITRS对铜互连工艺提出的要求及90～65nmCMP技术所面临的挑战,介绍了W熏STI熏Cu/低k材料CMP及其清洗和终点检测技术的发展现状,最后讨论了CMP技术的一些发展趋势。
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| 关 键 词： | CMP 浅沟道隔离 铜/低k材料 清洗 终点检测 发展趋势 |
| 文章编号： | 1004-4507(2004)06-0001-06 |
| 修稿时间： | 2004-05-27 |
The Present Situation and Tendency of CMP |
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| TONG Zhi-yi. The Present Situation and Tendency of CMP[J]. Equipment for Electronic Products Marufacturing, 2004, 33(6): 1-6 |
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| Authors: | TONG Zhi-yi |
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| Abstract: | This paper outlined the demand of Cu interconnect in accordance with ITRS 2002 and the challenge for 90 nm～65 nm CMP process. It also introduced the current situation of W,STI,Cu/low K dielectric film CMP,and its cleaning and end detection technique. Finaly discussed the tendency for CMP techniques. |
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| Keywords: | CMP |
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