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Application of AlGaAs/GaAs HBTs for wideband direct-coupled amplifiers |
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| Authors: | Yamauchi Y. Ishibashi T. |
| Affiliation: | NTT Electrical Communications Laboratories, Atsugi, Japan; |
| Abstract: | An AlGaAs/GaAs HBT direct-coupled amplifier has been designed and its characteristics described for the first time. The amplifier consists of two HBTs and three resistors without level-shift diodes. A superior amplifier performance of 11 dB gain with a 4 GHz bandwidth was obtained. |
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