Dynamic characterisation of Si/SiGe power HBTs |
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| Authors: | Erben U Gruhle A Schuppen A Kibbel H Koenig U |
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| Affiliation: | Dept. of Electron. Devices & Circuits, Ulm Univ.; |
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| Abstract: | Si/SiGe power heterojunction bipolar transistors (HBTs) grown by MBE were dynamically characterised in the common-base configuration. At an emitter current density of 1.1×105 A/cm2, a maximum frequency of oscillation of 49 GHz was observed. At 10 GHz a maximum unilateral gain of 14 dB is available, and a CW output power of 1.3 W/mm for a device with 10 parallel emitter-fingers of 1×10 μm2 each was predicted, from CW measurements |
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