Ge/Si SACM-APD器件分析

Ge/Si吸收区-电荷区-倍增区分离(SACM)结构的APD作为一种新型光电探测器已成为硅基APD器件研究的重点.对SACM Ge/Si型APD器件的基本结构及其主要特性参数,包括量子效率、响应度、暗电流等进行了理论分析及仿真验证.实验结果表明:在给定的器件参数条件下,所设计的APD器件的雪崩击穿电压为25.7 V,最大内部量子效率为91%,单位增益下响应度峰值为0.55 A/W,在750~1 500 nm范围内具有较高响应度,其峰值波长为1 050 nm;在高偏压以及高光照强度情况下,倍增区发生空间电荷效应从而导致增益降低.

Analysis of separate-absorption-charge-multiplication Ge/Si-APD

Ge/Si Separate-Absorption-Charge-Multiplication(SACM)-APD, as a new type of silicon APD, has become the focus of research. The device structure and its main parameters of Ge/Si SACM-APD(including quantum efficiency, responsivity, dark current, etc) were investigated in detail from the theory analysis and simulation. The simulation results show that the avalanche breakdown voltage is 25.7 V, the internal quantum efficiency is 90%, the maximum responsibility is up to 55 A/W when the gain is 1. The device is most sensitive in the spectral range of 750-1 500 nm. The peak wavelength of the APD is 1 050 nm. Under the condition of high bias and high light intensity, the electric field profile can be affected through the space charge of these electrons and holes.