| NTDCZSi中辐照施主的研究 |
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| 引用本文： | 任丙彦,李伟.NTDCZSi中辐照施主的研究[J].电子与信息学报,1991,13(3):332-336. |
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| 作者姓名： | 任丙彦 李伟 |
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| 作者单位： | 河北工学院材料研究中心 天津
(任丙彦)，河北工学院材料研究中心 天津(李伟) |
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| 摘 要： | 本文对中子嬗变掺杂直拉硅(NTDCZSi)中辐照施主(ID)的退火行为和性质进行了研究,并探讨了不同中子辐照剂量和氧、碳含量对辐照施主形成的影响。首次报道了低于750℃热处理所产生的施主平台现象,并分别利用低温Hall测量和透射电镜对其进行了研究。结果表明,ID在禁带中产生～20meV的浅施主能级,其电活性起源于硅和二氧化硅沉淀的界面态。
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| 关 键 词： | 中子辐照直拉硅 辐照施主 施主平台 |
| 收稿时间： | 1989-9-26 |
| 修稿时间： | 1990-6-29 |
INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI |
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| Ren Bingyan,Li Wei.INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI[J].Journal of Electronics & Information Technology,1991,13(3):332-336. |
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| Authors: | Ren Bingyan Li Wei |
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| Affiliation: | Hebei Institute of Technology Tianjin |
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| Abstract: | The annealing behaviour and property of irradiation donor (ID) in NTDCZSi have been studied by using the Hall effect measurements and TEM. In addidon, the effects of a variety of neutron doses and impurity (oxygen and carbon) concentrations on the forma-tion of ID are discussed. The phenomenon of Donor plateau is discovered for the first time. The experimental results show that ID creates about a 20 meV donor level in the forbidden band, which originates from the interface states of precipitated Si/SiO2. |
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| Keywords: | NTD CZ Si Irradiation donor Donor plateau |
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