|
|||||
|
|
Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature |
|
| Authors: | Jingwei Guo Hui Huang Xiaomin Ren Xin Yan Shiwei Cai Wei Wang Yongqing Huang Qi Wang Xia Zhang Key Laboratory of Information Photonics & Optical Communications Ministry of Education Beijing University of Posts Telecommunications Beijing China |
| Affiliation: | Jingwei Guo,Hui Huang,Xiaomin Ren,Xin Yan,Shiwei Cai,Wei Wang,Yongqing Huang,Qi Wang and Xia Zhang Key Laboratory of Information Photonics & Optical Communications Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China |
| Abstract: | Vertical zinc blende GaAs/AlGaAs heterostructure nanowires were grown at different temperatures by metalorganic chemical vapor deposition via Au-assisted vapor-liquid-solid mechanism.It was found that radial growth can be enhanced by increasing the growth temperature.The growth of radial heterostructure can be realized at temperature higher than 500℃,while the growth temperature of axial heterostructure is lower than 440℃.The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed. |
| Keywords: | Nanowire GaAs AlGaAs Heterostructure Zinc blende |
| 本文献已被 CNKI 等数据库收录！ | |