| SmCo薄膜磁控溅射沉积速率的影响因素 |
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| 引用本文： | 刘吉延,马世宁,孙晓峰,李新. SmCo薄膜磁控溅射沉积速率的影响因素[J]. 材料科学与工程学报, 2011, 0(3): 411-414 |
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| 作者姓名： | 刘吉延 马世宁 孙晓峰 李新 |
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| 作者单位： | 装甲兵工程学院装备再制造工程系;装备再制造技术国防科技重点实验室; |
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| 基金项目： | 再制造技术国防科技重点实验室基金资助项目(9140C8504030810) |
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| 摘 要： | SmCo薄膜的厚度是影响其磁性能的重要因素,而沉积速率是控制薄膜厚度的关键。采用直流磁控溅射工艺制备SmCo薄膜,设计正交实验并通过数理统计方法研究了溅射工艺参数中溅射功率、靶基距及氩气压强对SmCo薄膜沉积速率的影响,并同时考察了不同厚度SmCo薄膜的磁性能变化规律。研究结果表明:溅射功率与靶基距都对薄膜的沉积速率有较大的影响,其中在溅射功率为40~120W范围内时,随着溅射功率的增大SmCo薄膜的沉积速率逐渐提高;在靶基距为50~70mm的范围内,SmCo薄膜的沉积速率随靶基距的增大而逐渐降低;而在氩气压强处于0.7~1.5Pa范围内时,SmCo薄膜的沉积速率几乎不随氩气压强的改变而变化。在溅射功率为80W、靶基距为60mm及氩气压强为1.1Pa的工艺条件下,SmCo薄膜的沉积速率具有很好的稳定性。随膜厚从0.59μm增加到0.90μm,SmCo薄膜的矫顽力由23.4kA/m降低到8.2kA/m。
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| 关 键 词： | SmCo 磁控溅射 工艺参数 沉积速率 |
Influence of Technique Parameters on Depositing Rate of SmCo Films Prepared by Magnetron Sputtering |
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| LIU Ji-yan,MA Shi-ning,SUN Xiao-feng,LI Xin. Influence of Technique Parameters on Depositing Rate of SmCo Films Prepared by Magnetron Sputtering[J]. Journal of Materials Science and Engineering, 2011, 0(3): 411-414 |
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| Authors: | LIU Ji-yan MA Shi-ning SUN Xiao-feng LI Xin |
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| Affiliation: | LIU Ji-yan1,MA Shi-ning1,2,SUN Xiao-feng1,LI Xin1(1.Department of Remanufacturing Engineering,Academy of Armored Forces Engineering,Beijing 100072,China,2.National Defense Key Laboratory of Remanufacturing Technology,China) |
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| Abstract: | Thickness has been found to be an important factor that influences magnetic properties of SmCo thin films,and depositing rate is the key factor to determine the film thickness.By means of orthogonal experiments,SmCo thin films were prepared by DC magnetron sputtering.Influence of technique parameters on depositing rate of SmCo films was investigated by mathematical statistics method.And dependence of magnetic property on SmCo film thickness was also presented.Results show that the sputtering power and the t... |
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| Keywords: | SmCo magnetron sputtering technique parameter depositing rate |
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