Effect of emitter-base spacing on the current gain of AlGaAs/GaAsheterojunction bipolar transistors |
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| Authors: | Lee W.-S. Ueda D. Ma T. Pao Y.-C. Harris J.S. Jr. |
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| Affiliation: | Solid State Electron. Lab., Stanford Univ., CA ; |
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| Abstract: | An investigation of the effect of surface recombination and emitter-base-contact spacing on the DC current-gain of AlGaAs/GaAs heterojunction bipolar transistor (HBT) using thin AlGaAs emitter structures is discussed. The selectively-etched, thin-AlGaAs-emitter layer has been used to prevent an exposed extrinsic base region, which has previously limited current gain because of high surface recombination. It is found that a factor of ~50 improvement in the current gain can be achieved by proper surface passivation and emitter-base-contact spacing |
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