A generalized family of memristor‐based voltage controlled relaxation oscillator

Recently, memristive oscillators are a significant topic in the nonlinear circuit theory where there is a possibility to build relaxation oscillators without existence of reactive elements. In this paper, a family of voltage‐controlled memristor‐based relaxation oscillator including two memristors is presented. The operation of two memristors‐based voltage relaxation oscillator circuits is demonstrated theoretically with the mathematical analysis and with numerical simulations. The generalized expressions for the oscillation frequency and conditions are derived for different cases, where a closed form is introduced for each case. The effect of changing the circuit parameters on the oscillation frequency and conditions is investigated numerically. In addition, the derived equations are verified using several transient PSPICE simulations. The power consumption of each oscillator is obtained numerically and compared with its PSPICE counterpart. Furthermore, controlling the memristive oscillator with a voltage grants the design an extra degree of freedom which increases the design flexibility. The nonlinear exponential model of memristor is employed to prove the oscillation concept. As an application, two examples of voltage‐controlled memristor‐based relaxation oscillator are provided to elaborate the effect of the reference voltage on the output voltage. This voltage‐controlled memristor‐based relaxation oscillator has nano size with storage property that makes it more efficient compared with the conventional one. It would be helpful in many communication applications.