Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets (ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency (RF) magnetron sputtering.X-ray diffraction (XRD) analysis shows that the films are polyerystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the (002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 x 10-3 Ω·cm was obtained.