自对准AlGaAs/GaAs微波异质结双极晶体管(HBT) |
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引用本文: | 吴英 陈效建. 自对准AlGaAs/GaAs微波异质结双极晶体管(HBT)[J]. 固体电子学研究与进展, 1991, 11(3): 225-229 |
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作者姓名: | 吴英 陈效建 |
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作者单位: | 南京电子器件研究所 210016(吴英),南京电子器件研究所 210016(陈效建) |
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摘 要: | 本文提出了一种制作HBT采用的垂直台面结构自对准工艺.利用该工艺及对A1GaAs/GaAs具有高选择比的化学湿法腐蚀剂,已研制成微波HBT.发射区台面与基极电极间隙为0.1μm,最大直流电流增益为40,截止频率f_T为10GHz.
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关 键 词: | 双极晶体管 异质结 AlGaAs/GaAs |
The Self-aligned AIGaAs/GaAs Microwave HBT |
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Abstract: | A HBT self-aligned technology with a perpendicular side-wall mesa has been proposed. By virtue of a chemical wet etchant with high selectivity, microwave HBT has been fabricated. The gap leb between the emitter mesa edge and base contact is aboat 0.1μm. The transistor shows a current gain of 40 with fT of 10.0GHz. |
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