| 基于SOI材料的阵列波导光栅的制作 |
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| 引用本文： | 方青,李芳,刘育梁. 基于SOI材料的阵列波导光栅的制作[J]. 红外与毫米波学报, 2005, 24(2): 143-146 |
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| 作者姓名： | 方青 李芳 刘育梁 |
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| 作者单位： | 中国科学院半导体研究所,光电子研发中心,北京,100083;中国科学院半导体研究所,光电子研发中心,北京,100083;中国科学院半导体研究所,光电子研发中心,北京,100083 |
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| 基金项目： | 国家自然科学基金资助项目(90104003) |
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| 摘 要： | 采用ICP刻蚀的方法,在SOI材料上制作出了中心波长为 1. 5509μm、信道间隔为 200GHz的 5×5阵列波导光栅(AWG).测试中心波长与设计值相差 0. 28nm,测试波长间隔与设计值相差在 0. 02nm之内,相邻信道串扰接近10dB,信道插入损耗均匀性为 0. 7dB,测试结果表明该器件能够初步达到分波功能.
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| 关 键 词： | 复用/解复用器 阵列波导光栅(AWG) 信道间隔 中心波长 相邻信道串扰 |
| 文章编号： | 1001-9014(2005)02-0143-04 |
| 收稿时间： | 2004-06-08 |
| 修稿时间： | 2004-06-08 |
FABRICATION OF ARRAYED WAVEGUIDE GRATING BASED ON SOI MATERIAL |
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| FANG Qing,LI Fang,LIU Yu-Liang. FABRICATION OF ARRAYED WAVEGUIDE GRATING BASED ON SOI MATERIAL[J]. Journal of Infrared and Millimeter Waves, 2005, 24(2): 143-146 |
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| Authors: | FANG Qing LI Fang LIU Yu-Liang |
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| Abstract: | An arrayed waveguide grating based on SOI material was fabricated by inductive coupled plasma (ICP) etching technology. The central wavelength of the device was designed at 1.5509μm and the channel spacing was 200GHz. Comparing with the values of the design, the differences of the central wavelength and the channel spacing in the test were ~0.28nm and 0.02nm, respectively. The adjacent channel crosstalk was about 10dB, and the uniformity of the five channels’ insertion loss was only 0.7 dB. The results show that the device can be used as a demultiplexer. |
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| Keywords: | multiplexer/demultiplexer arrayed waveguide grating (AWG) channel spacing central wavelength adjacent channel crosstalk |
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