Laterally coupled DBR laser emitting at 1.55 /spl mu/m fabricated by focused ion beam lithography |
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Authors: | Bach L. Rennon S. Reithmaier J.P. Forchel A. Gentner J.L. Goldstein L. |
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Affiliation: | Technische Phys., Wurzburg Univ.; |
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Abstract: | By using focused ion beam lithography high performance 1.55-/spl mu/m emitting distributed Bragg reflector lasers were realized suitable for high-speed optical telecommunication. Threshold currents of 8 mA and continuous-wave efficiencies of 0.37 W/A for 600-/spl mu/m-long devices were achieved. Stable single-mode emission with sidemode suppression ratios of > 40 dB were observed for the entire operation range. By relative intensity noise measurements an intrinsic 3-dB modulation frequency of > 10 GHz was estimated for a single-mode output power of 23 mW. |
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