| 用于40Gb/s光电子器件的新型低成本硅基过渡热沉 |
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| 引用本文： | 熊兵,王健,蔡鹏飞,田建柏,孙长征,罗毅.用于40Gb/s光电子器件的新型低成本硅基过渡热沉[J].半导体学报,2005,26(10):2001-2005. |
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| 作者姓名： | 熊兵 王健 蔡鹏飞 田建柏 孙长征 罗毅 |
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| 作者单位： | 清华大学电子工程系,集成光电子学国家重点实验室,北京,100084;清华大学电子工程系,集成光电子学国家重点实验室,北京,100084;清华大学电子工程系,集成光电子学国家重点实验室,北京,100084;清华大学电子工程系,集成光电子学国家重点实验室,北京,100084;清华大学电子工程系,集成光电子学国家重点实验室,北京,100084;清华大学电子工程系,集成光电子学国家重点实验室,北京,100084 |
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| 基金项目： | 国家自然科学基金
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国家高技术研究发展计划(863计划)
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国家重点基础研究发展计划(973计划) |
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| 摘 要： | 提出了一种新型低成本硅基过渡热沉，用以实现高达40Gb/s的高速光电子器件封装. 采用高阻硅衬底作为热沉基底，制作出了0～40GHz范围内传输损耗小于0.165dB/mm的共面波导传输线. 热沉中采用Ta2N薄膜电阻作为负载以实现器件的阻抗匹配，达到了0～40GHz范围内低于-18dB的宽带低反射特性. 和传统硅基平台相比，新型硅基热沉更具有制作工艺简单、导热性能良好等优点. 为了证明其实用性，热沉被应用于高速电吸收调制器的管芯级封装测试，获得了超过33GHz的小信号调制带宽特性，在硅基热沉上首次实现可用于40Gb/s系统的光电子器件.
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| 关 键 词： | 宽带硅基过渡热沉 高速电吸收调制器 高阻率硅衬底 低损耗共面波导 薄膜电阻 |
| 文章编号： | 0253-4177（2005）10-2001-05 |
| 收稿时间： | 2004-09-02 |
| 修稿时间： | 2005-04-19 |
A Novel Low-Cost Wideband Si-Based Submount for 40Gb/s Optoelectronic Devices |
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| Xiong Bing,Wang Jian,Cai Pengfei,Tian Jianbo,Sun Changzheng,Luo Yi.A Novel Low-Cost Wideband Si-Based Submount for 40Gb/s Optoelectronic Devices[J].Chinese Journal of Semiconductors,2005,26(10):2001-2005. |
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| Authors: | Xiong Bing Wang Jian Cai Pengfei Tian Jianbo Sun Changzheng Luo Yi |
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| Affiliation: | State Key Laboratory of Integrated Optoelectronics , Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
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| Abstract: | A novel low-cost wideband Si-based submount is proposed and fabricated for 40Gb/s optoelectronic devices.In the submount,a CPW transmission line is directly formed on a high-resistivity Si substrate and exhibits a transmission loss as low as 0.165dB/mm up to 40GHz.The submount contains a Ta_2N thin-film resistor for impedance matching,and a low reflection coefficient of less than -18dB up to 40GHz is achieved.Such a configuration has the advantages of simplified fabrication procedures and efficient heat dissipation.As a demonstration,the Si-based submount is used in a high-speed electroabsorption (EA) modulator for chip-level packaging.The small-signal modulation bandwidth is measured to be over 33GHz,which is the first report of 40Gb/s optoelectronic devices on a Si-based submount. |
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| Keywords: | wideband Si-based submount high-speed EA modulator high-resistivity Si substrate low-loss CPW transmission line thin-film resistor |
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