垂直腔面发射激光端面泵浦的高能量调Q Nd:YAG激光

采用垂直腔面发射激光端面泵浦Nd∶YAG获得了高能量的1 064 nm调Q激光输出。与边发射半导体激光相比,垂直腔面发射激光具有各向发散角相同、波长随温度漂移小等优点,更适合用作泵浦源以产生高效率、结构紧凑的激光。泵浦能量为200 mJ时,产生了最高45 mJ的1 064 nm激光输出,光光转换效率达到22.5%,激光脉宽为8 ns,发散角为1.2 mrad。基于模拟计算优化了Nd3+掺杂浓度,通过采用低浓度的Nd∶YAG晶体减小泵浦端面增益,从而有效抑制了影响调Q激光能量提高的自激振荡,为获得高能量的端面泵浦调Q激光输出提供了有效的技术手段。

VCSEL end-pumped high-energy Q-switched Nd:YAG laser

A high-energy Q-switched 1 064 nm laser output is obtained using a vertical cavity surface emitting laser(VCSEL) with end pumping-Nd∶YAG. Compared with the edge emitting diode laser, the VCSEL is a more suitable generator for high efficiency and compact lasers because its pump source has the advantages of equal divergence angles in each direction and exhibits small wavelength shifts with temperature. The 1 064-nm laser with a maximum output of 45 mJ is generated with a pump energy of 200 mJ, corresponding to an optical conversion efficiency of 22.5%. The laser pulse width is 8 ns, and its divergence angle is 1.2 mrad. The doping concentration of Nd3+ is optimized based on simulations and calculations. Furthermore, self-excited oscillation, which affects the enhancement of Q-switched laser energy, is effectively suppressed by reducing the gain of the pump end by using a Nd∶YAG crystal with low doping concentration. This provides an effective technical method for obtaining high energy end-pumped Q-switched lasers.