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Preparation of cross-sectional TEM samples with observable thin sections at desired regions of non-uniform surfaced semiconducting devices |
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| Authors: | A. K. Rai M. H. Rashid P. P. Pronko A. Ezis D. W. Langer |
| Abstract: | Transmission electron microscopy of cross-sectional samples offers an attractive means to study process evaluation and failure analysis of many semiconducting devices. In the present work, a technique to prepare cross-sectional TEM samples, containing thin sections of specifically desired regions within nonuniform surfaced semiconducting devices, is described. |
| Keywords: | Cross-sectional TEM specimen Modulation doped field effect transistor (MODFET) |