Fabrication of Strain-Relaxed Si1 − xGex/Si(001) Buffer Layers of Low Surface Roughness |
| |
Authors: | N. V. Vostokov Yu. N. Drozdov Z. F. Krasil’nik O. A. Kuznetsov A. V. Novikov V. A. Perevoshchikov M. V. Shaleev |
| |
Affiliation: | (1) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia;(2) Physical-Technical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, Russia |
| |
Abstract: | The results are presented of the fabrication of strain-relaxed graded Si1 − xGex/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (<106 cm−2) and low surface roughness. The buffer layers are grown by atmospheric-pressure hydride CVD. It is found that chemical mechanical polishing can reduce their surface roughness to a level comparable with that of the original Si(001) substrates. It is shown that the polished buffer layers can serve as substrates for MBE-grown SiGe/Si heterostructures.__________Translated from Mikroelektronika, Vol. 34, No. 4, 2005, pp. 243–250.Original Russian Text Copyright © 2005 by Vostokov, Drozdov, Krasil’nik, Kuznetsov, Novikov, Perevoshchikov, Shaleev. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|