Growth and structure of heteroepitaxial thin films of homologous compounds RAO3(MO)m by reactive solid-phase epitaxy: Applicability to a variety of materials and epitaxial template layers

A reactive solid-phase epitaxy (R-SPE) method combines deposition of a thick amorphous or polycrystalline layer with a desired chemical composition and post-deposition solid-phase epitaxial growth. The solid-phase epitaxial growth is invoked by thermal annealing with an assistance of a sacrificial layer working as an epitaxial template. Thereby it enables us to grow high-quality epitaxial films of complex oxides whose epitaxial films are not grown by conventional high-temperature growth techniques. It was reported that 2-nm-thick ZnO layers worked as template for growing InGaO₃(ZnO)_m (m = integer) epitaxial films. The present study extended the R-SPE technique to growth of various complex oxides with chemical compositions of RAO₃(MO)_m and to use of various epitaxial template layers. We found that mono oxide epitaxial layers such as In₂O₃ and Ga₂O₃ work as template layers as well. Alternatively, a ZnO epitaxial layer is also applicable to ZnO-free compounds. The films obtained were grown heteroepitaxially on YSZ(111) and single-crystalline when the fabrication conditions are optimized.