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Stress formation in evaporated amorphous Ge-Se and Ge-Se-Ga(Tl, B) thin films |
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| Authors: | C. Popov S. Boycheva Y. Nedeva S. Parvanov |
| Affiliation: | a University of Kassel, Institute of Microstructure Technologies and Analytics (IMA), Heinrich-Plett-Str. 40, 34132 Kassel, Germany b Technical University of Sofia, Dept. of Thermal and Nuclear Engineering, 8 Kl. Ohridsky Blvd., 1000 Sofia, Bulgaria c University of Chemical Technology and Metallurgy, Department of Physics, Laboratory of Thin Film Technology, 8 Kl. Ohridsky Blvd., 1756 Sofia, Bulgaria |
| Abstract: | Thin amorphous chalcogenide films from the GeSex (x = 1-5), (GeSe4)100−yGay and (GeSe5)100−y Ga(Tl, B)y (y = 5, 10, 15, 20) systems have been prepared by thermal evaporation and characterized with respect to their internal stress using a cantilever technique. The correlations between the stress, the composition and the structure of the films were investigated. The obtained results were related with some structural and mechanical parameters of the glasses like mean coordination number, number of constrains per atom, density, compactness, microhardness and Young's modulus. For all investigated chalcogenide films a stress relaxation with the time was observed as a result of spontaneous structural rearrangements. |
| Keywords: | Amorphous materials Chalcogenide glasses Stress |
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