Simultaneous recrystallization, phosphorous diffusion and antireflection coating of silicon films using laser treatment |
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Authors: | Shui-Yang Lien Hsin-Yuan Mao In-Cha Hsieh Dong-Sing Wuu |
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Affiliation: | a Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, Republic of China b Department of Electrical Engineering, Da-Yeh University, Changhua 515, Taiwan, Republic of China c Institute of Electro-Optics and Material Science, National Formosa University, Huwei 632, Taiwan, Republic of China |
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Abstract: | Laser technique application to polycrystalline silicon thin-film solar cell fabrication on glass substrates has received appreciable attention. In this paper, a laser-doping technique is developed for plasma-deposited amorphous silicon film. A process involving recrystallization, phosphorous diffusion and antireflection coating can be achieved simultaneously using the laser annealing process. The doping precursor, a phosphorous-doped titanium dioxide (TiO2) solution, is synthesized using a sol-gel method and spin-coated onto the sample. After laser irradiation, the polycrystalline silicon grain size was about 0.5∼1.0 μm with a carrier concentration of 2 × 1019 cm− 3 and electron mobility of 92.6 cm2/V s. The average polycrystalline silicon reflectance can be reduced to a value of 4.65% at wavelengths between 400 and 700 nm, indicating the upper TiO2 film of antireflection coating. |
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Keywords: | 42.79.W 61.43 61.72.T 61.80B 68.35.F |
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