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Novel transparent conducting oxide: Anatase Ti1−xNbxO2 |
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| Authors: | Yutaka Furubayashi Taro Hitosugi Yukio Yamamoto Go Kinoda Toshihiro Shimada Tetsuya Hasegawa |
| Affiliation: | a Kanagawa Academy of Science and Technology (KAST), Japan b Department of Chemistry, University of Tokyo, Japan c Materials and Structures Laboratory, Tokyo Institute of Technology, Japan |
| Abstract: | Single-crystalline Ti1−xNbxO2 (x = 0.2) films of 40 nm thickness were deposited on SrTiO3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti1−xNbxO2 films with x ≥ 0.03 is 2-3 × 10− 4 Ω cm at room temperature. The carrier density of Ti1−xNbxO2, which is almost proportional to the Nb concentration, can be controlled in a range of 1 × 1019 to 2 × 1021 cm− 3. Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x = 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti1−xNbxO2 is one of the promising candidates for the practical TCOs. |
| Keywords: | Transparent conducting oxide Anatase Epitaxial film Resistivity Internal transmittance |
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