Zr靶功率对(WMoTaNb)ZrxN薄膜微观组织及性能的影响

目的 提高(WMoTaNb)ZrxN薄膜的硬度与弹性模量、膜基结合力、摩擦磨损及抗烧蚀性能。方法 采用反应磁控溅射技术，通过对Zr靶功率的调控，在单晶Si和M2高速钢基体上制备不同Zr含量的(WMoTaNb)ZrxN薄膜。采用FESEM对薄膜的表面及截面形貌进行观察，利用XRD对薄膜的物相组成进行分析，采用纳米压痕仪、划痕仪和摩擦磨损试验机分别对薄膜的硬度、膜基结合力及摩擦磨损性能进行表征，通过氧–乙炔烧蚀试验对薄膜的抗烧蚀性能进行测定。结果 (WMoTaNb)ZrxN薄膜主要由FCC和BCC固溶体结构组成，Zr元素引入后，薄膜FCC(200)晶面衍射峰消失，FCC(111)与(311)晶面衍射峰强度增强。随着Zr靶功率的增加，薄膜中Zr元素含量逐渐增加，薄膜的硬度与弹性模量先增大、后减小，膜基结合力呈现不规律变化，薄膜的抗烧蚀性能逐渐提升。薄膜的摩擦系数随着Zr靶功率的增加而增大，但维持在0.65~0.95。当Zr靶功率为40 W时，制备的薄膜硬度、弹性模量及膜基结合力均达到最大，分别为27.9 GPa、291.3 GPa、84 N，此时薄膜的磨痕深度最小为227 nm。结论 Zr靶功率为40 W时制备的薄膜硬度、弹性模量、膜基结合力、摩擦磨损与抗烧蚀性能最佳。

Effect of Zr Target Power on Microstructure and Performance of (WMoTaNb) ZrxN Films

As a physical vapor deposition method, magnetron sputtering technology can improve the surface performance of matrix without changing the substrate material. Besides, the deposition rate of the magnetron sputtering becomes faster and the film prepared by magnetron sputtering is uniformly dense and has high adhesion force. In this paper, reaction magnetron sputtering technology were used to prepare a series of (WMoTaNb)ZrxN films by changing Zr target power and this paper aimed to study the effect of Zr target power on the microstructure and performance of (WMoTaNb)ZrxN films.