Kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction with consideration for lattice heating

The lattice heating effect on the kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction is theoretically studied. It is shown that lattice heating leads to an additional third stage in the process of attaining the steady state in thermal currents and the thermoelectric power of hot carriers with a relaxation time determined by the thermal conductivity and heat capacity of the sample. It is also shown that the relaxation rate of the third stage is lower in comparison with stages I and II observed by Veinger and Sargsyans.