Kinetics of copper electrodeposition in citrate electrolytes |
| |
Authors: | E Chassaing K Vu Quang R Wiart |
| |
Affiliation: | (1) Centre d'Etudes de Chimie Métallurgique du CNRS, 15 rue Georges Urbain, 9440 Vitry, France;(2) Laboratoire propre no 15 du CNRS, Physique des Liquides et Electrochimie , Associé à l'Université Pierre et Marie Curie, 4 Place Jussieu, 75230 Paris Cedex 05, France |
| |
Abstract: | The kinetics of copper electrocrystallization in citrate electrolytes (0.5M CuSO4, 0.01 to 2M sodium citrate) and citrate ammonia electrolytes (up to pH 10.5) were investigated. The addition of citrate strongly inhibits the copper reduction. For citrate concentrations ranging from 0.6 to 0.8 M, the impedance plots exhibit two separate capacitive features. The low frequency loop has a characteristic frequency which depends mainly on the electrode rotation speed. Its size increases with increasing current density or citrate concentration and decreases with increasing electrode rotation speed. A reaction path is proposed to account for the main features of the reduction kinetics (polarization curves, current dependence of the current efficiency and impedance plots) observed in the range 0.5 to 0.8 M citrate concentrations. This involves the reduction of cupric complex species into a compound that can be either included as a whole into the deposit or decomplexed to produce the metal deposit. The resulting excess free complexing ions at the interface would adsorb and inhibit the reduction of complexed species. With a charge transfer reaction occurring in two steps coupled by the soluble Cu(I) intermediate which is able to diffuse into the solution, this model can also account for the low current efficiencies observed in citrate ammonia electrolytes and their dependencies upon the current density and electrode rotation speed.Nomenclature
b, b
1, b
1
*
Tafel coefficients (V–1)
-
bulk concentration of complexed species (mol cm–3)
- (si*)
concentration of intermediate C* atx=0 (mol cm–3)
-
C
concentration of (Cu Cit H)2– atx=0 (mol cm–3)
- C
C variation due to E
-
C
concentration of complexing agent (Cit)3- at the distancex (mol cm–3)
-
C
o
concentrationC atx=0 (mol cm–3)
- C
o
C
o
variation due to E
-
Cv
s
bulk concentrationC (mol cm–3)
- (Cit H), (Cu), (Compl)
molecular weights (g)
-
C
dl
double layer capacitance (F cm–2)
-
D
diffusion coefficient of (Cit)3- (cm2s–1)
-
D
1
diffusion coefficient of C* (cm2s–1)
-
E
electrode potential (V)
-
f
1
frequency in Equation 25 (s–1)
-
F
Faraday's constant (96 500 A smol–1)
-
i, i
1, i
1
*
current densities (A cm–2)
- i
i variation due to E
-
Im(Z)
imaginary part ofZ
-
j
-
k
1, k
1
*
, K1, K
1
*
, K2, K
rate constants (cms–1)
-
K
rate constant (s–1)
-
K
3
rate constant (cm3 A–1s–1)
-
R
t
transfer resistance ( cm2)
-
R
p
polarization resistance ( cm2)
-
Re(Z)
real part ofZ
-
t
time (s)
-
x
distance from the electrode (cm)
-
Z
f
faradaic impedance ( cm2)
-
Z
electrode impedance ( cm2)
Greek symbols
maximal surface concentration of complexing species (molcm–2)
-
thickness of Nernst diffusion layer (cm)
- , 1, 2
current efficiencies
-
angular frequency (rads–1)
-
electrode rotation speed (revmin–1)
-
=K
–1(s)
- d
diffusion time constant (s)
-
electrode coverage by adsorbed complexing species
- (in0)
electrode coverage due toC
s
- ![Delta](/content/m674l2127x216904/xxlarge916.gif)
variation due to E |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|