Distributed phase shifter with pyrochlore bismuth zinc niobate thin films |
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| Authors: | Jaehoon Park Lu JW Boesch DS Stemmer S York RA |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA; |
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| Abstract: | A monolithic Ku-band phase shifter employing voltage tunable Bi/sub 1.5/Zn/sub 1.0/Nb/sub 1.5/O/sub 7/ (BZN) thin film parallel plate capacitors is reported. BZN films were deposited by radio frequency magnetron sputtering on single-crystal sapphire substrates. A nine-section distributed coplanar waveguide loaded-line phase-shifter structure was designed. A differential phase shift of 175/spl deg/ was achieved with a maximum insertion loss of 3.5 dB at 15 GHz, giving a figure of merit /spl sim/50/spl deg//dB. To the best of our knowledge, this is the first demonstration of a monolithic tunable microwave circuit using BZN thin films. |
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