Characterization of charge trapping in submicrometer NMOSFET's bygate capacitance measurements |
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Authors: | Ling C.H. Yeow Y.T. Ah L.K. |
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Affiliation: | Dept. of Electr. Eng., Nat. Univ. of Singapore ; |
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Abstract: | Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence |
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