| Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications |
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| 作者姓名： | Ma Long Huang Yinglong Zhang Yang Wang Liangchen Yang Fuhu Zeng Yiping |
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| 作者单位： | 中国科学院半导体研究所 半导体集成技术研究中心，北京 100083;中国科学院半导体研究所 超晶格与微结构国家重点实验室，北京 100083;中国科学院半导体研究所 新材料实验室，北京 100083;中国科学院半导体研究所 半导体集成技术研究中心，北京 100083;中国科学院半导体研究所 半导体集成技术研究中心，北京 100083;中国科学院半导体研究所 超晶格与微结构国家重点实验室，北京 100083;中国科学院半导体研究所 新材料实验室，北京 100083 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 在InP衬底上采用感应耦合等离子体刻蚀技术制备了高性能的AlAs/In0.53Ga0.47As/InAs共振隧穿二极管.正向偏压下PVCR=7.57,Jp=39.08kA/cm2;反向偏压下PVCR=7.93,Jp=34.56kA/cm2.在未去除测试电极和引线等寄生参数影响下,面积为5μm×5μm的RTD的阻性截止频率为18.75GHz.最后对非对称的I-V特性进行了分析讨论.
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| 关 键 词： | 共振隧穿二极管 感应耦合等离子体 I-V特性 高频 resonant tunneling diode inductively coupled plasma current-voltage characteristics high frequency 高速电路 共振隧穿二极管 制作 AlAs Fabrication Applications Circuit InP Substrate Resonant Tunneling Diode characteristics structure effect probe wire cutoff frequency values reverse forward bias room temperature |
| 文章编号： | 0253-4177(2006)06-0959-04 |
| 收稿时间： | 12 30 2005 12:00AM |
| 修稿时间： | 02 15 2006 12:00AM |
Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications |
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| Ma Long,Huang Yinglong,Zhang Yang,Wang Liangchen,Yang Fuhu,Zeng Yiping.Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications[J].Chinese Journal of Semiconductors,2006,27(6):959-962. |
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| Authors: | Ma Long Huang Yinglong Zhang Yang Wang Liangchen Yang Fuhua and Zeng Yiping |
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| Affiliation: | Research Center of Semiconductor Integration Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research Center of Semiconductor Integration Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research Center of Semiconductor Integration Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | A high performance AlAs/In0.53Ga0.47As/InAs resonant tunneling diode (RTD) on InP substrate is fabricated by inductively coupled plasma etching.This RTD has a peak-to-valley current ratio (PVCR) of 7.57 and a peak current density Jp=39.08kA/cm2 under forward bias at room temperature.Under reverse bias,the corresponding values are 7.93 and 34.56kA/cm2.A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire.The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed. |
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| Keywords: | resonant tunneling diode inductively coupled plasma current-voltage characteristics high frequency |
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