Large electroabsorption effect in GaInAs/InP multiple quantum well(MQW) optical modulator grown by OMVPE |
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| Authors: | Wood TH Carr EC Burrus CA Miller BI Koren U |
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| Affiliation: | AT&T Bell Lab., Holmdel, NJ; |
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| Abstract: | To make short, high-speed electroabsorption modulators, it is necessary to use a material and device structure that displays a large change in absorption coefficient, Δα. The authors report a device with Δα=7800 cm-1, which provides an on/off ratio of 44:1 at λ=1.6 μm with a drive voltage of 10 V |
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