发射极掺杂工艺对产业化IBC太阳电池性能的影响

主要对n型IBC太阳电池结构的发射极硼掺杂工艺进行优化设计,并通过ENDA2模拟软件对实验结果进行验证分析,通过复合损失分析,研究不同发射极硼扩工艺对产业化IBC太阳电池电性能的影响.实验结果表明,采用较高推进温度的硼扩散工艺,获得发射极方阻98Ω/sq,该发射极具有最低的表面浓度1.68×1019 cm-3和最深结深...

INFLUENCE OF EMITTER DOPING PROCESS ON PERFORMANCE OF INDUSTRIAL IBC SOLAR CELL

In this paper, the emitter boron doping process is optimized for n-type IBC silicon wafer solar cell, and the experimental results are verified and analyzed by ENDA2 simulation software. The influence of different emitter boron diffusion processes on the performance of industrial IBC solar cell is investigated by the recombination loss analysis. The results show that the sheet resistance of 98 Ω/sq can be realized with higher drive-in temperature during boron diffusion process, which exhibits the lowest surface concentration of 1.68×10¹⁹ cm^-3 and the deepest p-n junction depth of 0.88 μm, and results in the lowest recombination loss （J_0,pass=24 fA/cm²） of the solar cells. Under 25 ℃, the AM 1.5 standard test conditions, the maximum efficiency of 23.4%（V_oc=688.4 mV, J_sc=41.99 mA/cm², FF=80.9%） is achieved for IBC solar cell with optimized boron diffusion process. Further, the power loss of each component of the champion cell is analyzed by numerical simulation, paving a new way for efficiency optimization in terms of the industrial IBC solar cell.