Capacitance–Voltage and Current–Voltage Measurements of Nitride Light-Emitting Diodes |
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Authors: | Chen NC Lien WC Wang YS Liu HH |
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Affiliation: | Chang Gung Univ., Taoyuan; |
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Abstract: | Capacitance-voltage (C-V ) and current-voltage (I-V) characteristics of nitride light-emitting diodes were measured. The apparent carrier distributions obtained from the C-V curves yielded much information about the samples, including information about the presence of acceptor-like defects in the active layer and the problem of electron overflow. The inconsistency between the experimental and simulated I-V curves also supported the presence of the defects. After compensating the acceptor-like defects by Si dopants and adjusting the overlap between the depletion region and the light-emitting structure, device performance was improved. |
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