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Microwave dielectric properties and microstructures of MgTa2O6 ceramics with CuO addition |
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| Authors: | Cheng-Liang Huang Kuo-Hau Chiang Chi-Yuen Huang |
| Affiliation: | aDepartment of Electrical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 70101, Taiwan bDepartment of Resources Engineering, National Cheng Kung University, No. 1 University Road, Tainan 70101, Taiwan |
| Abstract: | The effect of CuO addition on the microstructures and the microwave dielectric properties of MgTa2O6 ceramics has been investigated. It is found that low level-doping of CuO (up to 1 wt.%) can significantly improve the density of the specimens and their microwave dielectric properties. Tremendous sintering temperature reduction can be achieved due to the liquid phase effect of CuO addition observed by scanning electronic microscopy (SEM). The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. With 0.5 wt.% CuO addition, MgTa2O6 ceramic can be sintered at 1400 °C and possesses a dielectric constant (r) of 28, a Q × f value of 58000 GHz and a temperature coefficient of resonant frequency (τf) of 18 ppm/°C. |
| Keywords: | A. Sintering C. Dielectric Properties E. Functional applications |
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