| 硅/玻璃键合技术在RF-MEMS开关制作中的应用 |
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| 引用本文： | 王培森,于映,罗仲梓,彭慧耀.硅/玻璃键合技术在RF-MEMS开关制作中的应用[J].微纳电子技术,2007,44(1):30-33. |
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| 作者姓名： | 王培森 于映 罗仲梓 彭慧耀 |
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| 作者单位： | 1. 福州大学,物理与信息工程学院,福州,350002
2. 厦门大学,萨本栋微机电研究中心,福建,厦门,361005 |
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| 基金项目： | 国家自然科学基金;福建省科技厅科研项目 |
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| 摘 要： | 介绍了一种新的RF-MEMS开关制作工艺,利用静电键合技术将表面微加工工艺与体硅加工工艺结合在一起完成开关上下电极的组合;说明了如何在普通环境下进行图形对准;通过静电力的理论计算和键合试验,分析了铝台阶对硅/玻璃静电键合的影响,得出铝台阶厚度低于100nm时键合效果较好;对有无铝台阶时的静电键合电流特性进行比较,分析了硅/玻璃界面电荷分布及其运动情况,为RF-MEMS开关的设计与制作提供了有意义的参考。
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| 关 键 词： | 硅/玻璃键合 电流特性 电荷分布 Al台阶 RF-MEMS开关 |
| 文章编号： | 1671-4776(2007)01-0030-04 |
| 修稿时间： | 2006-07-13 |
Application of Si/Glass Bonding in the Facture of RF-MEMS Switches |
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| WANG Pei-sen,YU Ying,LUO Zhong-zi,PENG Hui-yao.Application of Si/Glass Bonding in the Facture of RF-MEMS Switches[J].Micronanoelectronic Technology,2007,44(1):30-33. |
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| Authors: | WANG Pei-sen YU Ying LUO Zhong-zi PENG Hui-yao |
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| Affiliation: | 1.Department of physics and information engineering, Fuzhou University, Fuzhou 350002, China; 2.Peng Tung Sah MEMS research center, Xiamen University, Xiamen 361005, China |
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| Abstract: | Bulk micromachining processes and surface sacrificial processes were connected by Si/glass bonding for making RF-MEMS switches.How to align the mask at nomal condition was given.The theoretical calculations of the static force and lots of bonding experiments were done to prove the influence of Al in the Si/glass bonding,educing that better results of Al thickness below 100 nm.The current characteristic was compared in the electrostatic bonding with Al or not.The charge distribution and movement in the interface of silicon wafer and glass wafer was analyzed.Significant reference was provided for the design and manufacture of RF-MEMS switches. |
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| Keywords: | Si/glass bonding current characteristic charge distribution Al steps RF-MEMS switches |
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