| 基于电子激励解吸附原理的二次电子崩假说 |
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| 引用本文： | 高巍,孙广生,严萍,邵涛.基于电子激励解吸附原理的二次电子崩假说[J].高压电器,2004,40(5):366-369. |
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| 作者姓名： | 高巍 孙广生 严萍 邵涛 |
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| 作者单位： | 1. 中国科学院电工研究所,北京,100080;中国科学院研究生院,北京,100039
2. 中国科学院电工研究所,北京,100080 |
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| 基金项目： | 国家863计划资助项目，国家自然科学基金资助项目(50207011) |
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| 摘 要： | 系统阐述了基于电子激励解吸附原理的二次电子崩假说的核心论点,即绝缘体表层气体解吸附是导致闪络发生的关键,分析了假说中的阴极三结合点场致电子发射、二次电子崩产生、二次电子发射系数δ、绝缘体表面电荷、绝缘体表面气体解吸附等因素在闪络过程中的作用。
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| 关 键 词： | 二次电子崩 二次电子发射系数 解吸附 |
| 文章编号： | 1001-1609(2004)05-0366-04 |
Mechanism of Secondary Electron Emission Avalanche Based on Electron-stimulated Desorption |
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| GAO Wei,SUN Guang-sheng,YAN Ping,SHAO Tao.Mechanism of Secondary Electron Emission Avalanche Based on Electron-stimulated Desorption[J].High Voltage Apparatus,2004,40(5):366-369. |
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| Authors: | GAO Wei SUN Guang-sheng YAN Ping SHAO Tao |
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| Affiliation: | GAO Wei1,2,SUN Guang-sheng1,YAN Ping1,SHAO Tao1,2 |
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| Abstract: | The core idea of mechanism of secondary electron emission avalanche that desorption of adsorbed surface gas is the key process leading to the surface flashover, is analyzed. The main factors, that is, emission of electrons from the cathode triple junction (the interface where the insulator, cathode and vacuum are combined), secondary electron emission avalanche, secondary emission yield δ, insulator surface charge, electron-stimulated desorption efficiency, are expatiated. |
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| Keywords: | secondary electron emission avalanche(SEEA) secondary electron emission yield desorption |
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