α粒子注入对SRAM存储单元的影响研究

针对目前SRAM存储单元所面临的α粒子注入引起的软错误问题,首先采用一个简化的反相器模型,模拟其在α粒子注入时的输出变化;然后将该输出用作SRAM存储单元电路仿真的输入信号,研究α粒子注入对存储单元双稳电路稳定性的影响,其中,α粒子的注入通过一个电流源来模拟;最后,比较两种电流源模型下存储单元的存储情况。可以看出,pMOS等效电阻越大或节点电容越小,α粒子的注入越容易导致存储单元软错误的发生。也就是说,临界电荷越小,发生软错误的可能性越大。

Impact of Alpha-Particle Injection on SRAM Cells

To study the problem of alpha-particle induced soft errors in SRAM cells,the impact of alpha-particle injection on the stability of bistable circuit in SRAM cell was investigated,in which a simplified inverter model was employed to simulate variation of an inverter's output,and the output was then used as input signal of the SRAM cell in the simulation.The injection of alpha-particle was simulated with current source,and effects of pMOSFET equivalent resistor and node capacitor parameters on output voltage ...