| SiO2平面光波导工艺中的反应离子刻蚀研究 |
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| 引用本文： | 周立兵,罗风光,曹明翠. SiO2平面光波导工艺中的反应离子刻蚀研究[J]. 真空科学与技术学报, 2004, 24(6): 434-438 |
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| 作者姓名： | 周立兵 罗风光 曹明翠 |
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| 作者单位： | 华中科技大学,激光技术国家重点实验室,武汉,430074 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 利用反应离子刻蚀工艺实现硅基SiO2平面光波导的刻蚀,研究了不同刻蚀条件对刻蚀速率、刻蚀选择比、刻蚀侧壁光洁度等刻蚀结果的影响,并首次研究了分别以无定形硅与多晶硅作为SiO2波导刻蚀掩膜对刻蚀垂直度的影响.利用改进的SiO2反应离子刻蚀工艺,得到了传输损耗极低的SiO2光波导.
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| 关 键 词： | 平面光波导 反应离子刻蚀 硅基二氧化硅 传输损耗 侧壁光洁度 |
| 文章编号： | 1672-7126(2004)06-0434-05 |
| 修稿时间： | 2004-03-12 |
Reactive Ion Etching of SiO2 in Planar Lightwave Circuit Fabrication |
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| Zhou Libing,Luo Fengguang and Cao Mingcui. Reactive Ion Etching of SiO2 in Planar Lightwave Circuit Fabrication[J]. JOurnal of Vacuum Science and Technology, 2004, 24(6): 434-438 |
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| Authors: | Zhou Libing Luo Fengguang Cao Mingcui |
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| Affiliation: | Zhou Libing*,Luo Fengguang and Cao Mingcui |
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| Abstract: | Influence of various etching conditions on the etching rate,etching selectivity and sidewall roughness in reactive ion etching (RIE) technology for fabricating silica-on-silicon planar lightwave circuits.For the first time,amorphous Si:H a nd poly-Si were used as mask,respectively,and how they affect the vertical angl e of the etched sidewalls in fabricating silica wave-guedes was studied and com pared.In addition,we succeeded in fabricating SiO 2 wave-guides of very low tr ansmission loss with the optimized reactive ion etching. |
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| Keywords: | Planar lightwave circuit Reactive ion etching Silica-on-silicon Transmission l oss Sidewall roughness |
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