Si-Sb-Te materials for phase change memory applications |
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| Authors: | Rao Feng Song Zhitang Ren Kun Zhou Xilin Cheng Yan Wu Liangcai Liu Bo |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics, Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China. |
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| Abstract: | Si-Sb-Te materials including Te-rich Si?Sb?Te? and Si(x)Sb?Te? with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si(x)Sb?Te? shows better thermal stability than Ge?Sb?Te? or Si?Sb?Te? in that Si(x)Sb?Te? does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si(x)Sb?Te? improves. The 10 years retention temperature for Si?Sb?Te? film is ~393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si(x)Sb?Te? films also show improvement on thickness change upon annealing and adhesion on SiO? substrate compared to those of Ge?Sb?Te? or Si?Sb?Te? films. However, the electrical performance of PCRAM cells based on Si(x)Sb?Te? films with x > 3.5 becomes worse in terms of stable and long-term operations. Si(x)Sb?Te? materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance. |
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