Noise in two-tier matrix amplifiers

A noise theory for the two-tier matrix amplifier is developed that permits the computation of the amplifier's noise figure as a function of the active device and circuit parameters. The computed results based on the noise parameters of a GaAs MESFET with gate dimensions 0.25 μm×200 μm are discussed. In addition, a comparative study is done on the performance data from a 2×4 matrix amplifier and its equivalent two-stage distributed amplifier. Finally, the noise characteristics of two 2×4 matrix amplifiers incorporating GaAs MESFETs processed on either ion-implanted or VPE (vapor-phase epitaxial) substrate material are compared with those measured on actual amplifiers