Effect of illumination on the rate of relaxation of light-induced metastable states in <Emphasis Type="Italic">a</Emphasis>-Si:H(B) |
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| Authors: | I A Kurova N N Ormont A L Gromadin |
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| Affiliation: | (1) Department of Physics, Moscow State University, Moscow, 119992, Russia;(2) GIREDMET (State Research Institute for the Rare-Metals Industry), Moscow, 109017, Russia |
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| Abstract: | Time dependences of the rates of relaxation of light-induced metastable states of electrically active impurity atoms in boron-doped a-Si:H films have been studied in the dark and under illumination. It has been established that under illumination the rate of relaxation of light-induced metastable states of boron atoms grows in the initial stage when the rate of light-induced relaxation of these states exceeds that of their light-induced generation. |
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