Point‐Defect‐Passivated MoS2 Nanosheet‐Based High Performance Piezoelectric Nanogenerator

In this work, a sulfur (S) vacancy passivated monolayer MoS₂ piezoelectric nanogenerator (PNG) is demonstrated, and its properties before and after S treatment are compared to investigate the effect of passivating S vacancy. The S vacancies are effectively passivated by using the S treatment process on the pristine MoS₂ surface. The S vacancy site has a tendency to covalently bond with S functional groups; therefore, by capturing free electrons, a S atom will form a chemisorbed bond with the S vacancy site of MoS₂. S treatment reduces the charge‐carrier density of the monolayer MoS₂ surface, thus the screening effect of piezoelectric polarization charges by free carrier is significantly prevented. As a result, the output peak current and voltage of the S‐treated monolayer MoS₂ nanosheet PNG are increased by more than 3 times (100 pA) and 2 times (22 mV), respectively. Further, the S treatment increases the maximum power by almost 10 times. The results suggest that S treatment can reduce free‐charge carrier by sulfur S passivation and efficiently prevent the screening effect. Thus, the piezoelectric output peaks of current, voltage, and maximum power are dramatically increased, as compared with the pristine MoS₂.