Chemical Growth of 1T‐TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity |
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| Authors: | Xinsheng Wang Haining Liu Juanxia Wu Junhao Lin Wen He Hui Wang Xinghua Shi Kazutomo Suenaga Liming Xie |
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| Affiliation: | 1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, P. R. China;2. University of Chinese Academy of Sciences, Beijing, P. R. China;3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;4. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, P. R. China |
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| Abstract: | Ultrathin two‐dimensional (2D) charge density wave (CDW) materials, with sharp resistance change at the phase‐transition temperature, yet with ultrathin thickness, hold great potential for electrical device applications. However, chemical synthesis of high‐quality samples and observation of the CDW states down to the monolayer limit is still of great challenge. Chemical vapor deposition of 1T‐TaS2 sheets on hexagonal boron nitride (h‐BN) with robust CDW states even down to the monolayer extreme is reported here. Further, based on the near commensurate CDW to incommensurate CDW phase transition with a high temperature coefficient of resistance (TCR), highly responsive room‐temperature bolometers are fabricated by suspending the as‐grown 1T‐TaS2 sheets. |
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| Keywords: | 2D materials bolometers charge density waves chemical vapor deposition TaS2
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