GaSb半导体表面极化子基态能量的研究

采用Ｌ．Ｌ．Ｐ方法导出表面极化子的基态能量，声子平均数，讨论了电子在反冲效应中发射和吸收不同波矢声子之间相互作用对ＧａＳｂ半导体表面中表面极化子基态能量的影响。数值计算结果表明：当动量趋于零时，声子之间的相互作用对极化子性质无影响；当动量达到某一值时，声子之间相互作用的能量占极化子总能量中非常显著的部分；随着动量（平方）的增加，声子平均数近似线性地增加。

Studies on the Ground State Energy of the Surface polaron in a GaSb Semiconductor Surface

The ground state energy of the surface polaron and the mean number of the phonons were derived by using L.L.P method.The influence of the interaction between phonons of different wave vactors in the recoil process on the ground state energy of the surface polaron in the GaSb semiconductor surface was discussed.Numerical calculations show that there is no influence of the interaction between phonons on the character of the polaron when the momentum is at zero and the energy of the interaction between phonons hold the notable part of the total enevgy of the polaron when the momentum reach a certain value and the mean number of the pohonons increases in approximate direct ratio with increasing momentum(square).