Influence of mobility model on extraction of stress dependent source–drain series resistance |
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Authors: | M. M. De Souza S. K. Manhas D. Chandra Sekhar A. S. Oates P. Chaparala |
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Affiliation: | a Emerging Technologies Research Centre, De Montfort University, Gateway Street, Leicester LE1 9BH, UK;b TSMC, 121 Park Ave 3, Science Based Industrial Park, Hsinchu, Taiwan;c Advanced Process Technology Development, National Semiconductor Corp., 2900 Semiconductor Dr., M/S E-155, Santa Clara, CA 95051, USA |
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Abstract: | The extraction of the parasitic source–drain series resistance after stress is a significant challenge, which has not been reported for channel lengths below 0.5 μm. Methods proposed until now yield a reducing series resistance behaviour for such channel lengths, contrary to expectation. We demonstrate that the underlying cause of this phenomenon is due to modification of mobility behaviour under stress. A new methodology for monitoring the time dependent progression of series resistance and mobility degradation for stress conditions varying from hot carriers to Negative Bias Temperature is proposed. A new threshold voltage model separating the effects of damaged and undamaged portions of a stressed device is also demonstrated. |
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