| Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology |
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| 作者姓名： | Zhu Shi Yang Huang Yi Ping Wu Dong Ping |
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| 作者单位： | Zhu Shi Yang，Huang Yi Ping，Wu Dong Ping ( Department of Electronic Engineering，Fudan University，Shanghai200433) Gao Jian Xia ( Xinjiang Institute of Physics，the Chinese Academy of Sciences，Urumqi 830011) and Li Jin Hua ( Jiangsu Petroc |
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| 摘 要： | ＴｏｔａｌｄｏｓｅｒａｄｉａｔｉｏｎｃｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆｎｃｈａｎｎｅｌＭＯＳＦＥＴｓｆａｂｒｉｃａｔｅｄｕｓｉｎｇＦＩＰＯＳｔｅｃｈｎｏｌｏｇｙＺｈｕＳｈｉＹａｎｇ，ＨｕａｎｇＹｉＰｉｎｇ，ＷｕＤｏｎｇＰｉｎｇ（Ｄｅｐａｒｔ...
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Total dose radiation characteristics of n channel MOSFETs fabricated using FIPOS technology |
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| Zhu Shi Yang,Huang Yi Ping,Wu Dong Ping.Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology[J].Nuclear Science and Techniques,1997(3). |
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| Authors: | Zhu Shi Yang Huang Yi Ping Wu Dong Ping |
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| Abstract: | |
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| Keywords: | FIPOS SOI Total dose radiation NMOSFET |
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