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Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy |
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| Authors: | Kuznetsov V. P. Shmagin V. B. Drozdov M. N. Marychev M. O. Kudryavtsev K. E. Kuznetsov M. V. Andreev B. A. Kornaukhov A. V. Krasilnik Z. F. |
| Affiliation: | 1.Research Physicotechnical Institute, Lobachevsky State University, Nizhni Novgorod, 603950, Russia ;2.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia ;3.Lobachevsky State University, Nizhni Novgorod, 603950, Russia ; |
| Abstract: | The dependence of the concentrations of the Er impurity and ionized donors on the epitaxy temperature has been studied before and after annealing of Si:Er/Si layers grown by sublimation molecular-beam epitaxy. n-Si:Er layers have been grown in the temperature range 400–800°C and annealed in hydrogen atmosphere at a temperature of 800°C for 30 min. The possible nature of the donor centers is discussed. |
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