Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector |
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| Authors: | Salwan K. J. Al-Ani Raid A. Ismail Hana F. A. Al-Ta’ay |
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| Affiliation: | (1) Department of Physics, College of science, Al-Mustansiriya University, P.O. Box 47121, Al-Jadirya, Baghdad, Iraq;(2) School of Applied Science, University of Technology, Baghdad, Iraq;(3) College of Science for Women, Baghdad University, Baghdad, Iraq |
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| Abstract: | Optoelectronic properties of CdS:In/Si anisotype heterojunction photodetector fabricated by depositing of polycrystalline CdS and indium doped CdS films used thermal resistive technique on clean monocrystalline p-type silicon substrates are presented. The effect of In diffusion temperature(T d)in CdS layer on the optoelectronic characteristics of these devices has been studied. Two peaks situated at 650 and 800 nm with values of 0.32 and 0.43 A/W, respectively, were observed in the responsivity plot. Other optoelectronics properties such as detectivity, photovoltaic, and response time are also presented. |
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