台面结终端高压4H-SiC BJTs的击穿特性研究

根据雪崩碰撞理论，本文对具有台面结构的4H-SiC BJTs中所使用的单区和多区结终端结构参数对击穿电压的影响进行了分析和计算。计算结果表明，在单区结终端结构中，通过精确控制有源JTE的掺杂浓度和离子注入深度可以有效提高台面BJTs器件的击穿电压，而多区结终端结构可以在保持击穿电压不变的前提下降低峰值表面电场。同时文中还对正负表面态或界面态对击穿电压的影响做了详细的计算分析。这些结果对于优化台面功率器件的高压特性有着重要的现实意义。

Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination

According to the avalanche ionization theory, a computer-based analysis is performed to analyze the structural parameters of single- and multiple-zone junction termination extension (JTE) structures for 4H-SiC bipolar junction transistors (BJTs) with mesa structure. The calculation results show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability. The influences of the positive and negative surface or interface states on the blocking capability are also shown. These conclusions have a realistic meaning in optimizing the design of a mesa power device.