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Synthesis and lithographic evaluation of poly[(methacrylic acid tert-butyl cholate ester)-co-(γ-butyrolactone-2-yl methacrylate)] |
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| Authors: | Jin-Baek Kim Jong-Sung Ko Ji-Hyun Jang Hyun-woo Kim |
| Affiliation: | a Department of Chemistry, School of Molecular Science (BK21) and Center for Advanced Functional Polymers, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, South Korea b Department of Advanced Materials Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, South Korea c Samsung Electronics Co. Ltd, P.O. Box 111, Suwon 440-600, South Korea d Samsung SDI Co. Ltd, Gongse-ri, Kiheung-eup, Yongin-City, Gyeonggi-do 449-902, South Korea |
| Abstract: | Poly(methacrylic acid tert-butyl cholate ester)-co-(γ-butyrolactone-2-yl methacrylate)] was synthesized and evaluated as a new 193-nm chemically amplified photoresist. This polymer showed good thermal stability up to 240 °C and had a good transmittance at 193 nm. This material showed good resistance to CF4-reactive ion etching. The resist patterns of 0.15 μm feature size were obtained at a dose of 11 mJ cm−2 using an argon fluoride excimer laser stepper. |
| Keywords: | ArF lithography Methacrylic acid tert-butyl cholate ester γ-Butyrolactone-2-yl methacrylate |
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